Conceptual

Crystallographic Control of Core-Shell Nanowire Bending and Twisting

How the spontaneous bending and twisting of a semiconductor core-shell nanowire is governed by the crystallographic orientation of the shell-deposition beam relative to the wire's hexagonal side facets, rather than by shell amount alone. Established through scanning and transmission electron microscopy of GaAs-InP nanowires and a hexagonal-facet electron-tomography reconstruction of the shell distribution, showing that facet-relative deposition geometry is an engineering control for shaping out-of-plane nanowire sensors.