Electromigration in Integrated Circuit Interconnects
The gradual transport of metal atoms in a conductor caused by momentum transfer from high-density electron flow. Over time it produces voids and hillocks that open or short interconnects, a wear-out reliability failure that accelerates strongly with current density and temperature and constrains metal-line sizing in IC design.
This Concept is waiting for its first lesson!
The gradual transport of metal atoms in a conductor caused by momentum transfer from high-density electron flow. Over time it produces voids and hillocks that open or short interconnects, a wear-out reliability failure that accelerates strongly with current density and temperature and constrains metal-line sizing in IC design.
Are you a teacher? Sign in to start contributing.
Sign In