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Max Headroom
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Porous-Layer GaN Micro-LEDs with Enhanced Light Confinement
A fabrication and characterisation study of gallium-nitride green micro-LEDs that places a single electrochemically-etched porous n-GaN layer beneath the InGaN/GaN active region. The low effective refractive index of the porous layer confines photons to the active region, raising luminous intensity about 22-fold over non-porous devices and narrowing the emission linewidth. Combining the porous layer with square or hexagonal mesa geometries produces pronounced resonant emission, offering a simpler single-layer alternative to distributed-Bragg-reflector resonant-cavity LEDs for mitigating the efficiency-on-size effect.