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Strain-Mediated Voltage Control of Magnetic Anisotropy in Bi-YIG Films

Electric-field control of magnetization in bismuth-substituted yttrium iron garnet films and mesostructures on a PMN-PT piezoelectric substrate. Voltage-induced substrate strain transfers to the magnetostrictive garnet and, via the converse magnetoelectric effect, modulates magnetic anisotropy, switching the easy axis by 90 degrees and controlling reversal fields for energy-efficient non-volatile memory and neuromorphic devices.