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ZIF-8 Metal-Organic Framework Resistive Memory with Noise-Resolved Zinc Filaments
A solution-processed Al/ZIF-8/ITO resistive random-access memory in which zinc-ion migration through the metal-organic framework forms and ruptures conductive filaments, giving stable bipolar switching from -20 C to 100 C. Low-frequency noise spectroscopy tracks the conduction regimes (ohmic, Schottky emission, space-charge-limited) and filament formation during set and reset, and shows that the reset voltage sets the filament length, giving up to nine distinct resistance states for multi-bit storage. Students learn how noise and impedance measurements reveal a switching mechanism that current-voltage curves alone cannot.